Faithin Omaha eBook Collection

While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capab

While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capab

Owing to their unique characteristics, direct wide bandgap energy, large breakdown field, and excellent electron transport properties, including operation at hi

"Advances in wide bandgap semiconductor materials are enabling the development of a new generation of power semiconductor devices that far exceed the performanc

Presents state-of-the-art GaN and SiC electronic devices, as well as detailed applications of these devices to power conditioning, r. f. base station infrastruc