Selective Chemical Vapor Deposition of Heavily Boron Doped Silicon-germanium Films from Disilane, Germane and Chlorine for Source/drain Junctions of Nanoscale CMOS
| Author | : Nemanja Pešović |
| Publisher | : |
| Total Pages | : 149 |
| Release | : 2002 |
| ISBN-10 | : OCLC:51211327 |
| ISBN-13 | : |
| Rating | : 4/5 ( Downloads) |
Book Synopsis Selective Chemical Vapor Deposition of Heavily Boron Doped Silicon-germanium Films from Disilane, Germane and Chlorine for Source/drain Junctions of Nanoscale CMOS by : Nemanja Pešović
Download or read book Selective Chemical Vapor Deposition of Heavily Boron Doped Silicon-germanium Films from Disilane, Germane and Chlorine for Source/drain Junctions of Nanoscale CMOS written by Nemanja Pešović and published by . This book was released on 2002 with total page 149 pages. Available in PDF, EPUB and Kindle. Book excerpt: Keywords: selective, epitaxy, sige, source, drain, MOSFET, transistor.
