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Language: en
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Type: BOOK - Published: 2004 - Publisher:
Language: en
Pages: 26
Pages: 26
Type: BOOK - Published: 1969 - Publisher:
Equipment and growth procedures for growing beta-silicon carbide epitaxially on beta-silicon carbide substrates from methyltrichlorosilane in a carrier gas of h
Language: en
Pages: 25
Pages: 25
Type: BOOK - Published: 1965 - Publisher:
Changes in crystal size and morphology were obtained by modifying the process for growing crystals of betasilicon carbide from solution in carbon-saturated melt
Language: en
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Type: BOOK - Published: 2007 - Publisher:
Language: en
Pages: 24
Pages: 24
Type: BOOK - Published: 1973 - Publisher:
A high-pressure, high-temperature furnace system is described for crystal growth experiments using crucibles up to 13 cm in diameter and 26 cm high. The vertica