Faithin Omaha eBook Collection

Changes in crystal size and morphology were obtained by modifying the process for growing crystals of betasilicon carbide from solution in carbon-saturated melt

The report summarizes the development program in the growth of large high purity beta silicon carbide crystals. Conditions for stable beta growth were partially

Equipment and growth procedures for growing beta-silicon carbide epitaxially on beta-silicon carbide substrates from methyltrichlorosilane in a carrier gas of h

The project involves the development of low pressure chemical vapor deposition and r-f sputtering techniques for the synthesis of single crystal thin films of b