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Gallium Nitride Epitaxy by a Novel Hybrid VPE Technique
Language: en
Pages: 131
Authors: David J. Miller
Categories:
Type: BOOK - Published: 2011 - Publisher: Stanford University

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Gallium nitride is an important material for the production of next-generation visible and near-UV optical devices, as well as for high temperature electronic a
Gallium Nitride Epitaxy by a Novel Hybrid VPE Technique
Language: en
Pages:
Authors: David J. Miller
Categories:
Type: BOOK - Published: 2011 - Publisher:

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Gallium nitride is an important material for the production of next-generation visible and near-UV optical devices, as well as for high temperature electronic a
Lateral Epitaxial Growth Techniques for Gallium Nitride Thin Films on 6H-silicon Carbide (0001) Substrates Via Metalorganic Vapor Phase Epitaxy
Language: en
Pages: 226
Gallium Nitride Remote Epitaxy
Language: en
Pages: 0
Authors: Kuan Qiao (Scientist in mechanical engineering)
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Type: BOOK - Published: 2022 - Publisher:

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Silicon-based electronics devices and integrated circuits have been the backbone of most modern technology, the demands for smaller and faster electronics have
The Growth of Gallium Nitride Films Via the Innovative Technique of Atomic Layer Epitaxy
Language: en
Pages: 28
Authors:
Categories:
Type: BOOK - Published: 1989 - Publisher:

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This contract involves investigating the efficacy of atomic layer and molecular beam epitaxy techniques for the growth of GaN (a wide bandgap semiconductor). Du