Formation of Low-resistivity Germanosilicide Contacts to Phosphorus Doped Silicon-germanium Alloy Source/drain Junctions for Nanoscale CMOS
Author | : Hongxiang Mo |
Publisher | : |
Total Pages | : 131 |
Release | : 2003 |
ISBN-10 | : OCLC:53966428 |
ISBN-13 | : |
Rating | : 4/5 ( Downloads) |
Book Synopsis Formation of Low-resistivity Germanosilicide Contacts to Phosphorus Doped Silicon-germanium Alloy Source/drain Junctions for Nanoscale CMOS by : Hongxiang Mo
Download or read book Formation of Low-resistivity Germanosilicide Contacts to Phosphorus Doped Silicon-germanium Alloy Source/drain Junctions for Nanoscale CMOS written by Hongxiang Mo and published by . This book was released on 2003 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt: Keywords: SiGe, germanosilicide, contact reistance, silicide, silicon germanium, MOSFET, source drain.