Faithin Omaha eBook Collection

Gallium Nitride (GaN) and related alloys have gained considerable momentum in recent years since the improvement in silicon (Si) based power devices is now only

Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the

Nowadays, the microelectronics technology is based on the mature and very well established silicon (Si) technology. However, Si exhibits some important limitati

Gallium nitride (GaN)-based High Electron Mobility Transistors (HEMTs) for high voltage, high power switching and regulating for space applications are studied